4GHz 1310nm DFB laser
Product Features
l Supports up to 6bps bit rates
l Low threshold current
l High output power
l TO56 Header package
l Ball lens cap/ Aspherical lens cap option
l Operating case temperature: -40 to 85 °C
l High reliability
l Compatible with RoHS6
Product Applications
l Gigabit Ethernet
l Fiber Channel for 4.25G
l Analog communication
l Data communication
Performance Specifications
Absolute Maximum Ratings | ||||
Parameter | Symbol | Min. | Max. | Unit |
Laser diode forward current | If | 150 | mA | |
Laser diode reverse voltage | V | 2 | V | |
Front power | Pf | 40 | mW | |
PD reverse voltage | V | 20 | V | |
Forward current (PD) | Im | 2 | mA | |
Operation temperature | To | -40 | +85 | °C |
Storage temperature | Ts | -40 | +100 | °C |
Storage relative humdity | Sr | 85 | % | |
Optical and Electrical Specification (Tc=25°C) | ||||||
Parameter | Symbol | Min | Typ | Max | Unit s | Not e |
Thershold current | Ith | 8 | 15 | mA | - | |
Operation current | Iop | 30 | 40 | mA | - | |
Operation voltage | Vop | 1.6 | V | - | ||
Peak wavelength | λ | 1260 | 1310 | 1360 | nm | |
Slope efficiency | SE | 0.1 | W/A | |||
Spectral width(-20dB) | △λ | 0.2 | 1 | nm | ||
Side-mode Suppression Ratio | SMSR | 30 | dB | |||
Rise/Fall Time | tr/tf | 250 | ps | |||
Bandwidth (-3dB,Po=5mW) | BW | 3 | 4.5 | Ghz | - | |
Monitoring current | Im | 75 | 1000 | uA | - | |
Dark current (PD) | Id | 100 | nA | |||
Notes: All laser chips come from wafers that have been certified using a representative lot
of devices that must achieve an acceptable yield for burn-in.
Outline drawings
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